STPSC20065WY

Automotive 650 V, 20 A SiC Power Schottky Diode

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	DO-247

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features

Key features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability ECOPACK^®2 compliant component PPAP capable Operating T_j from -40 °C to 175 °C

In stock

Quantity	$ per unit	Savings
1-9	$5.17	0%
10-40	$4.34	16%
40 +	Contact sales

$5.17

$5.16

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	DO-247

Description

Key features

Key features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability ECOPACK^®2 compliant component PPAP capable Operating T_j from -40 °C to 175 °C