STPSC20065DY

STPSC20065DY

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STPSC20065WY

Automotive 650 V, 20 A SiC Power Schottky Diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameDO-247

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • ECOPACK®2 compliant component
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
In stock
Quantity $ per unit Savings
1-9$5.130%
10-40$4.0122%
Contact sales
$5.13
$5.13
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameDO-247

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • ECOPACK®2 compliant component
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C