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    STPSC20G12WL

    1200 V, 20 A High surge Silicon Carbide Power Schottky Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDO247 LONG LEADS
    Description

    The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
    Read More

    Key features
    Key features
    • None or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -55 °C to 175 °C
    • Avalanche energy rated
    • ECOPACK2 compliant component
    In stock
    Quantity $ per unit Savings
    1-9$7.330%
    10$5.8620%
    10 + Contact sales
    $7.33
    $7.33
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDO247 LONG LEADS
    Description

    The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
    Read More

    Key features
    Key features
    • None or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -55 °C to 175 °C
    • Avalanche energy rated
    • ECOPACK2 compliant component