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STPSC20H12D
1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $8.45 | 0% |
| 10-24 | $8.27 | 2% |
| 25-99 | $5.66 | 33% |
| 100-499 | $5.37 | 36% |
| 500 | $4.60 | 46% |
| 500 + | Contact sales | |
$8.45
$8.45
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky...
Read More
|