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STPSC2H065BY-TR

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Automotive 650V, 2 A Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$1.760%
10 - 99$1.5910%
100 - 499$1.2827%
500$1.0540%
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Out of stock
$1.76
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDPAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will boost performance in hard switching conditions.

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • PPAP capable
  • ECOPACK2 compliant component
  • VRRM guaranteed from -40 to 175 °C
  • Power efficient product