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Automotive 650V, 2 A Silicon Carbide Power Schottky Diode
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | DPAK |
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $1.42 | 0% |
10-99 | $1.17 | 18% |
100-499 | $0.91 | 36% |
500 | $0.77 | 46% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | DPAK |
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|