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STPSC2H12D
1200 V power Schottky silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $1.76 | 0% |
| 10-99 | $1.51 | 14% |
| 100-149 | $1.34 | 24% |
| 149 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|