STPSC8H065D

STPSC8H065D

STPSC8H065G-TR

STPSC8H065G-TR

Active

STPSC8H065DI

650 V, 8 A High surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC Ins

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 VRMS
    • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component
In stock
Quantity $ per unit Savings
1-9$2.380%
10-99$1.7925%
100-499$1.6332%
500$1.6033%
Contact sales
$2.38
$2.38
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC Ins

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 VRMS
    • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component