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TSB582IQ2T

TSB582IQ2T

TSB582IYDT

TSB582IYDT

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TSB582IDT

200 mA output current with thermal shutdown and output current limiter, 3.1 MHz, 36 V, BiCMOS dual operational amplifier

Supply Voltage Min Volt4.0
Supply Voltage Max Volt36.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NamePowerSO-8

The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions. In addition, the TSB582 has enhanced ESD and RF noise immunity.It typically outputs up to 200 mA per...
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Key features
  • Wide supply voltage: 4 V - 36 V
  • High output current 200 mA
  • Rail-to-rail output, low rail input
  • Gain bandwidth product: 3.1 MHz
  • High slew rate: 2 V/µs
  • Internal thermal shutdown & output current limiter
  • Enhanced RF noise immunity
  • High tolerance to ESD: 4 kV HBM
  • Extended temperature range: -40 °C to 125 °C
  • Automotive grade
  • Low noise 45 nV/√Hz @ 1 kHz
  • Icc (typ.) = 2.3 mA
  • Unity gain stable
  • Low offset 2.4 mV max. (25 °C) / 3 mV max. (full temperature range)
  • Low input bias current
  • Packages: SO8 & DFN8 exposed pad
In stock
Quantity $ per unit Savings
1-9$3.190%
10-24$2.8511%
25-50$2.7115%
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$3.19
$3.19
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Supply Voltage Min Volt4.0
Supply Voltage Max Volt36.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NamePowerSO-8

The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions. In addition, the TSB582 has enhanced ESD and RF noise immunity.It typically outputs up to 200 mA per...
Read More

Key features
  • Wide supply voltage: 4 V - 36 V
  • High output current 200 mA
  • Rail-to-rail output, low rail input
  • Gain bandwidth product: 3.1 MHz
  • High slew rate: 2 V/µs
  • Internal thermal shutdown & output current limiter
  • Enhanced RF noise immunity
  • High tolerance to ESD: 4 kV HBM
  • Extended temperature range: -40 °C to 125 °C
  • Automotive grade
  • Low noise 45 nV/√Hz @ 1 kHz
  • Icc (typ.) = 2.3 mA
  • Unity gain stable
  • Low offset 2.4 mV max. (25 °C) / 3 mV max. (full temperature range)
  • Low input bias current
  • Packages: SO8 & DFN8 exposed pad