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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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Ultra-low-power with FPU Arm Cortex-M33 MCU with TrustZone, 160 MHz with 2 Mbytes of Flash memory
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High voltage, current sense amplifier with open drain comparator and ref
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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package
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Very high accuracy (7 µV) high bandwidth (1.6 MHz) zero drift 5 V op amp