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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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Mainstream Arm Cortex-M0+ MCU with 128 Kbytes of Flash memory, 36 Kbytes RAM, 64 MHz CPU, 4x USART,
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High temperature (150°C) & long mission profile automotive grade, high accuracy (250 µV) 5
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Automotive Grade 1200V, 10A, silicon carbide power Schottky Diode
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38 V, 3 A synchronous step-down converter with 17 µA quiescent current
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N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package