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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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High efficiency, high-side switch with extended diagnostics and smart driving for capacitive loads
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High temperature (150°C) & long mission profile automotive grade, high accuracy (250 µV) 5
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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Micropower (60uA), rail-to-rail 16V CMOS Op-Amps, quad, GBP 200kHz, low offset voltage version
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Wide-bandwidth (20MHz) rail to rail input/output 5V CMOS Op-Amp, single
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Very high accuracy (25 µV) high bandwidth (3 MHz) zero drift 5 V operational amplifiers