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    MASTERGAN1L

    MASTERGAN1L

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    MASTERGAN1LTR

    600 V half-bridge enhancement mode GaN HEMT with high voltage driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
    Read More

    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
      • QFN 9 x 9
        x 1 mm package
      • RDS(ON)
        = 150 mΩ
      • IDS(MAX)
        = 10 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on VCC
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shutdown functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Overtemperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    • Ultra short wake up time, less than 200 ns
    In stock
    Quantity $ per unit Savings
    1-9$7.000%
    10-24$5.4023%
    25-99$5.0128%
    100-249$4.5735%
    250-499$4.3538%
    500$4.2240%
    500 + Contact sales
    $7.00
    $7.00
    or
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
    Read More

    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
      • QFN 9 x 9
        x 1 mm package
      • RDS(ON)
        = 150 mΩ
      • IDS(MAX)
        = 10 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on VCC
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shutdown functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Overtemperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    • Ultra short wake up time, less than 200 ns
    Associated products