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N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package
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P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package
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Very low power application processor module for Bluetooth® low energy v5.2
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N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
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Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode