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650 V, 20 A trench gate field-stop M series low loss IGBT in D7 packing
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N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a DPAK package
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N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package
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N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
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N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
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N-channel 800 V, 13 Ohm typ., 250 mA SuperMESH Power MOSFET in a TO-92 package
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Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island pa