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1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
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N-channel 60 V, 9 mOhm typ., 60 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
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N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
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N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package
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N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
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N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a TO-220FP package
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N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220FP package