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Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packin
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Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package
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N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in D2PAK package
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N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 500 V, 0.48 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP package
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N-channel 650 V, 230 mOhm typ., 12 A MDmesh M5 Power MOSFET in a DPAK pakage
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N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
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N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in a TO-220FP package