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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
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Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 p
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
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MEMS digital output motion sensor: high-performance 3-axis accelerometer for automobile applications
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MPU with Arm Dual Cortex-A7 800 MHz, Arm Cortex-M4 real-time coprocessor, 3D GPU, TFT/MIPI DSI displ
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300 mA, 28 V low-dropout voltage regulator, with 5 µA quiescent current
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK package