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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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61 V 3 A asynchronous step-down switching regulator with adjustable current limitation
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Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
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MPU with Dual Arm Cortex-A35 @1.5GHz, Cortex-M33 @400MHz, 3xEthernet (2+1 switch), 3xFD-CAN, LVDS/DS
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2 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package