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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 168
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N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package
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4 Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
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Double channel high-side driver with analog current sense for automotive applications
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Mainstream Mixed signals MCUs Arm Cortex-M4 core with DSP and FPU, 64 Kbytes of Flash memory, 72 MHz
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400 mA nano-quiescent synchronous step-down converter with digital voltage selection, Power Good and