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N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package
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Automotive-grade, very high accuracy (70 uV), high bandwidth (3 MHz), high temperature (175 °C)
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High efficiency, high-side switch with extended diagnostics, smart driving for capacitive loads and
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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a D2PAK package
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Ultra-low-power Arm Cortex-M0+ MCU with 192-Kbytes of Flash memory, 32 MHz CPU, USB, LCD, AES
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Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (60uA), GBP=880kHz, small offset, single