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Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing
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N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
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Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
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N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package
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N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package
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N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a D2PAK package
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N-channel 650 V, 0.182 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
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Automotive-grade N-channel 600 V, 37 mOhm typ., 56 A MDmesh DM6 Power MOSFET in a TO-247 package