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N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (60uA), GBP=2.4MHz, single
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128-Kbit serial SPI bus EEPROM with high speed clock 105°C operation
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Very high accuracy (5 uV) zero drift 5 V CMOS Op-Amp, single, GBP=400kHz
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Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package
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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package