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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package
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N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package
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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Very high accuracy (5 uV) zero drift 5 V CMOS Op-Amps, dual, GBP=400kHz
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (60uA), GBP=880kHz, small offset, single
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Rail to rail input/output 5V CMOS Op-Amps, micro-power (10uA), GBP=120kHz, small offset, dual