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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.50 | 0% |
| 10-24 | $7.93 | 24% |
| 25-99 | $7.43 | 29% |
| 100-249 | $6.65 | 37% |
| 250-499 | $6.34 | 40% |
| 500 | $6.00 | 43% |
| 500 + |
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| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
Read More
|