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Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
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Low clamping, low capacitance bidirectional single line ESD protection
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (29uA), GBP=420kHz, small offset, single, with
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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package
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Ultra-low-power Module - Dual core Arm Cortex-M4 MCU 64 MHz, Cortex-M0+ 32 MHz with 1 Mbyte of Flash