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Galvanically isolated 4 A single gate driver for SiC MOSFETs
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Dual channel digital isolator
Galvanically isolated 4 A single gate driver
High-performance access line, Arm Cortex-M4 core with DSP and FPU, 256 Kbytes of Flash memory, 100 M
Mainstream Arm Cortex-M4 MCU 170 MHz with 512 Kbytes of Flash memory, Math Accelerator, HR Timer, Hi
Ultra-low-power dual core Arm Cortex-M4 MCU 64 MHz, Cortex-M0+ 32 MHz with 1 Mbyte of Flash memory,
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
Programmable power-line communication modem system-on-chip
