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High-performance and DSP with DP-FPU, Dual core Arm Cortex-M7+ Cortex-M4 MCU with 2MBytes of Flash m
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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)