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Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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4 A peak 800 kHz fixed-frequency PWM synchronous step-down demonstration board with enable on/off ba
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ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, soft diode and NTC
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Dynamic NFC/RFID tag IC with 16-Kbit EEPROM, energy harvesting, I2C bus and ISO 15693 RF interface
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MCU discovery board for SPC5 Chorus 4M automotive microcontroller with CAN transceivers
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Ultra-low-power Cortex-M3 MCU with 256 Kbytes of Flash memory, 32 MHz CPU, LCD, USB, 3xOp-amp
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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads package