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    📢 Limited time offer – Buy One Get One Free on Intelligent Power Switch boards. Use code DV-IPS-BOGO-12 at checkout! Order now

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    EVALPWD5F60

    Demonstration board for PWD5F60 smart driver with integrated high voltage full bridge

    Parameters
    Target ApplicationBrushed DC Motor
    Core ProductPWD5F60
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The PWD5F60 is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a compact QFN package.The integrated power MOSFETs have an RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used...
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    Key features
    Key features
    • Power system-in-package integrating gate drivers and power MOSFETs featuring:
      • RDS(ON) = 1.38 Ω
      • BVDSS = 600 V
      • 2 embedded comparators
    • Very low area occupation, all active devices in SMT technology and no heatsink
    • Fast-decay or slow-decay on-board constant OFF-time peak current control
    • PWM voltage mode control with overcurrent protection possible via external logic signals
    • Driver supply voltage range: 10 V to 20 V
    • UVLO protection on low-side and high-side
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Internal bootstrap diode
    • Bill of materials reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design
    • RoHS compliant
    • Load current up to 1 A
    In stock
    Quantity $ per unit Savings
    1-2$42.260%
    2 + Contact sales
    $42.26
    $42.26
    Parameters
    Target ApplicationBrushed DC Motor
    Core ProductPWD5F60
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The PWD5F60 is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a compact QFN package.The integrated power MOSFETs have an RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used...
    Read More

    Key features
    Key features
    • Power system-in-package integrating gate drivers and power MOSFETs featuring:
      • RDS(ON) = 1.38 Ω
      • BVDSS = 600 V
      • 2 embedded comparators
    • Very low area occupation, all active devices in SMT technology and no heatsink
    • Fast-decay or slow-decay on-board constant OFF-time peak current control
    • PWM voltage mode control with overcurrent protection possible via external logic signals
    • Driver supply voltage range: 10 V to 20 V
    • UVLO protection on low-side and high-side
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Internal bootstrap diode
    • Bill of materials reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design
    • RoHS compliant
    • Load current up to 1 A
    Associated products