EVSTDRIVEG600DG

Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs

Parameters

Core Product	STDRIVEG600
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.The EVSTDRIVEG600DG board is easy to use...
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Key features

Key features
Half-Bridge topology featuring 600V STDRIVEG600 gate driver Equipped with 150 mΩ 650V HEMT GaN GaN in 5x6mm PowerFLAT package with Kelvin source HV bus up to 500 V 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3V regulator for external circuitry supply 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for gate GaN power transistor monitoring Optional low-side shunt RoHS compliant.

In stock

Quantity	$ per unit	Savings
1	$141.84	0%
1 +	Contact sales

$141.84

Parameters

Core Product	STDRIVEG600
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

Key features

Key features
Half-Bridge topology featuring 600V STDRIVEG600 gate driver Equipped with 150 mΩ 650V HEMT GaN GaN in 5x6mm PowerFLAT package with Kelvin source HV bus up to 500 V 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3V regulator for external circuitry supply 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for gate GaN power transistor monitoring Optional low-side shunt RoHS compliant.