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    EVSTDRIVEG600DG

    Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with 150 mΩ, 650V e-mode GaN HEMT

    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs.It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to 20 V, with undervoltage...
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    Key features
    Key features
    • Half-bridge topology featuring 600 V STDRIVEG600 gate driver with separated sink/source and integrated bootstrap diode
    • Equipped with 150 mΩ, 650 V GaN HEMT
    • GaN in 5x6mm PowerFLAT package with Kelvin source
    • HV bus up to 500 V
    • Tunable hard-on and hard-off dV/dt
    • 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
    • On-board adjustable deadtime generator to convert single PWM signal in independent high-side and low-side deadtime
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • High frequency connector for gate GaN power transistor monitoring
    • Optional low-side shunt
    • RoHS compliant
    In stock
    Quantity $ per unit Savings
    1$141.850%
    1 + Contact sales
    $141.85
    $141.85
    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs.It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to 20 V, with undervoltage...
    Read More

    Key features
    Key features
    • Half-bridge topology featuring 600 V STDRIVEG600 gate driver with separated sink/source and integrated bootstrap diode
    • Equipped with 150 mΩ, 650 V GaN HEMT
    • GaN in 5x6mm PowerFLAT package with Kelvin source
    • HV bus up to 500 V
    • Tunable hard-on and hard-off dV/dt
    • 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
    • On-board adjustable deadtime generator to convert single PWM signal in independent high-side and low-side deadtime
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • High frequency connector for gate GaN power transistor monitoring
    • Optional low-side shunt
    • RoHS compliant
    Associated products