EVSTDRIVEG600DG

Active

Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs

Quantity $ per Unit Savings
1 - 2$117.600%
Contact Sales
In stock
$117.60
Parameter NameParameter Value
Core ProductSTDRIVEG600
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameCARD
Key features
  • Half-Bridge topology featuring 600V STDRIVEG600 gate driver
  • Equipped with 150 mΩ 650V HEMT GaN
  • GaN in 5x6mm PowerFLAT package with Kelvin source
  • HV bus up to 500 V
  • 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
  • On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
  • Separated inputs with external deadtime can also be used
  • On-board 3.3V regulator for external circuitry supply
  • 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies
  • High frequency connector for gate GaN power transistor monitoring
  • Optional low-side shunt
  • RoHS compliant.