L6386ED013TR

L6386ED013TR

Active

L6386ED

HV high and low side driver with embedded comparator and bootstrap diode

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can...
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Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Integrated bootstrap diode
  • Outputs in phase with inputs
In stock
Quantity $ per unit Savings
1-9$1.720%
10-24$1.5411%
25-99$1.4516%
100$1.2428%
Contact sales
$1.72
$1.72
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Integrated bootstrap diode
  • Outputs in phase with inputs