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    Shipping Delays — We are currently experiencing unusually high order volume, which is affecting order processing. As a result, shipments may be delayed. We are working to get orders out as quickly as possible.

    L6386ED

    L6386ED

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    L6386ED013TR

    HV high and low side driver with embedded comparator and bootstrap diode

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 50/30 nsec rise/fall with 1 nF load
    • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
    • Undervoltage lockout on lower and upper driving section
    • Integrated bootstrap diode
    • Outputs in phase with inputs
    Out of Stock
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 50/30 nsec rise/fall with 1 nF load
    • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
    • Undervoltage lockout on lower and upper driving section
    • Integrated bootstrap diode
    • Outputs in phase with inputs
    Associated products