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L6474PDTR

L6474PDTR

L6474PD

L6474PD

Active

L6474HTR

Stepper motor driver with up to 16 microsteps with SPI and advanced current control

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameHTSSOP28

The L6474 device, realized in analog mixed signal technology, integrates a dual low RDS(on)DMOS full bridge with all power switches equipped with an accurate on-chip current sensing circuitry suitable for non-dissipative current control and overcurrent protections. Thanks to a new current control,...
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Key features
  • Operating voltage: 8 - 45 V
  • 7.0 A output peak current (3.0 Ar.m.s.)
  • Low RDS(on)power MOSFETs
  • Programmable power MOS slew rate
  • Up to 1/16 microstepping
  • Current control with adaptive decay
  • Non-dissipative current sensing
  • SPI interface
  • Low quiescent and standby currents
  • Programmable non-dissipative overcurrent protection on all power MOS
  • Two-level overtemperature protection
In stock
Quantity $ per unit Savings
1-9$4.850%
10-24$3.7024%
25-99$3.4130%
100-249$3.0936%
250-499$2.9439%
500$2.8541%
Contact sales
$4.85
$4.85
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameHTSSOP28

The L6474 device, realized in analog mixed signal technology, integrates a dual low RDS(on)DMOS full bridge with all power switches equipped with an accurate on-chip current sensing circuitry suitable for non-dissipative current control and overcurrent protections. Thanks to a new current control,...
Read More

Key features
  • Operating voltage: 8 - 45 V
  • 7.0 A output peak current (3.0 Ar.m.s.)
  • Low RDS(on)power MOSFETs
  • Programmable power MOS slew rate
  • Up to 1/16 microstepping
  • Current control with adaptive decay
  • Non-dissipative current sensing
  • SPI interface
  • Low quiescent and standby currents
  • Programmable non-dissipative overcurrent protection on all power MOS
  • Two-level overtemperature protection