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Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
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N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in DPAK package
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 168
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N-channel logic level 40 V, 2.3 mOhm max., 124 A STripFET F8 Power MOSFET in a PowerFLAT 3.3x3.3 pac
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 180 MH
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Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
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N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 180 MH
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High-performance access line, Arm Cortex-M4 core with DSP and FPU, 1,5 MByte of Flash memory, 100 MH
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N-channel 800 V, 0.65 Ohm typ., 10.5 A SuperMESH Power MOSFET in a TO-220 package