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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-3PF package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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N-channel logic level 40 V, 2.3 mOhm max., 124 A STripFET F8 Power MOSFET in a PowerFLAT 3.3x3.3 pac
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N-channel 600 V, 278 mOhm typ., 9 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
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N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a D2PAK package
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N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package
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N-channel 600 V, 1.5 Ohm typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package