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High-density power driver - high voltage full bridge with integrated gate driver
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | QFN 10X13 |
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $14.31 | 0% |
10-24 | $10.87 | 24% |
25-99 | $10.42 | 27% |
100-249 | $9.17 | 36% |
250-499 | $8.73 | 39% |
500 | $8.16 | 43% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | QFN 10X13 |
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
Read More
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