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NRND
PWD13F60
High-density power driver - high voltage full bridge with integrated gate driver
| Sustainable Technology Compliancy | Environmental |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | QFN 10X13 |
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $13.78 | 2% |
| 10-24 | $10.98 | 19% |
| 25-99 | $10.22 | 24% |
| 100-249 | $9.39 | 30% |
| 250-499 | $9.30 | 31% |
| 500 | $8.75 | 35% |
| 500 + | Contact sales | |
| Sustainable Technology Compliancy | Environmental |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | QFN 10X13 |
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
Read More
|
