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PWD13F60TR

PWD13F60TR

Active

PWD13F60

High-density power driver - high voltage full bridge with integrated gate driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameQFN 10X13

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
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Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as
    • Full bridge
    • Dual independent half bridges
  • Wide driver supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Very compact and simplified layout
  • Flexible, easy and fast design
Out of Stock
Quantity $ per unit Savings
1-9$6.880%
10-24$6.2010%
25-30$5.9214%
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$6.88
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameQFN 10X13

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
Read More

Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as
    • Full bridge
    • Dual independent half bridges
  • Wide driver supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Very compact and simplified layout
  • Flexible, easy and fast design