PWD13F60

High-density power driver - high voltage full bridge with integrated gate driver

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	QFN 10X13

Description

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
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Key features

Key features
Power system-in-package integrating gate drivers and high-voltage power MOSFETs Low R_DS(on) = 320 mΩ BV_DSS = 600 V Suitable for operating as Full bridge Dual independent half bridges Wide driver supply voltage down to 6.5 V UVLO protection on supply voltage 3.3 V to 15 V compatible inputs with hysteresis and pull-down Interlocking function to prevent cross conduction Internal bootstrap diode Outputs in phase with inputs Very compact and simplified layout Flexible, easy and fast design

In stock

Quantity	$ per unit	Savings
1-9	$14.31	0%
10-24	$10.87	24%
25-99	$10.42	27%
100-249	$9.17	36%
250-499	$8.73	39%
500	$8.16	43%
500 +	Contact sales

$14.31

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	QFN 10X13

Description

Key features

Key features
Power system-in-package integrating gate drivers and high-voltage power MOSFETs Low R_DS(on) = 320 mΩ BV_DSS = 600 V Suitable for operating as Full bridge Dual independent half bridges Wide driver supply voltage down to 6.5 V UVLO protection on supply voltage 3.3 V to 15 V compatible inputs with hysteresis and pull-down Interlocking function to prevent cross conduction Internal bootstrap diode Outputs in phase with inputs Very compact and simplified layout Flexible, easy and fast design