PWD13F60TR

PWD13F60TR

PWD13F60

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High-density power driver - high voltage full bridge with integrated gate driver
Quantity $ per Unit Savings
1 - 9$6.060%
10 - 24$5.4410%
25 - 99$5.1515%
100 - 249$4.4626%
250 - 499$4.2330%
500$3.8037%
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In stock:
$6.06
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameQFN 10X13
Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as
    • Full bridge
    • Dual independent half bridges
  • Wide driver supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Very compact and simplified layout
  • Flexible, easy and fast design