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    PWD13F60

    PWD13F60

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    PWD13F60TR

    High-density power driver - high voltage full bridge with integrated gate driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN 10X13
    Description

    The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
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    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
      • Low RDS(on) = 320 mΩ
      • BVDSS = 600 V
    • Suitable for operating as
      • Full bridge
      • Dual independent half bridges
    • Wide driver supply voltage down to 6.5 V
    • UVLO protection on supply voltage
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Interlocking function to prevent cross conduction
    • Internal bootstrap diode
    • Outputs in phase with inputs
    • Very compact and simplified layout
    • Flexible, easy and fast design
    Out of Stock
    Quantity $ per unit Savings
    1-9$7.250%
    10$6.5510%
    10 + Contact sales
    $7.25
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN 10X13
    Description

    The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied...
    Read More

    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
      • Low RDS(on) = 320 mΩ
      • BVDSS = 600 V
    • Suitable for operating as
      • Full bridge
      • Dual independent half bridges
    • Wide driver supply voltage down to 6.5 V
    • UVLO protection on supply voltage
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Interlocking function to prevent cross conduction
    • Internal bootstrap diode
    • Outputs in phase with inputs
    • Very compact and simplified layout
    • Flexible, easy and fast design
    Associated products