STGAP2GSC

Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Parameters

Operating Range	Industrial
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO 8 WIDE 300

Description

The STGAP2GS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and...
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Key features

Key features
High voltage rail up to 1200 V Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V dV/dt transient immunity ±100 V/ns Input-output propagation delay: 45 ns Separate sink and source option for easy gate driving configuration UVLO function optimized for GaN Gate driving voltage up to 15 V 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shut-down protection Standby function Wide body SO-8W package

Out of Stock

Quantity	$ per unit	Savings
1-500	$3.46	0%
500 +	Contact sales

$3.46

Parameters

Operating Range	Industrial
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO 8 WIDE 300

Description

Key features

Key features
High voltage rail up to 1200 V Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V dV/dt transient immunity ±100 V/ns Input-output propagation delay: 45 ns Separate sink and source option for easy gate driving configuration UVLO function optimized for GaN Gate driving voltage up to 15 V 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shut-down protection Standby function Wide body SO-8W package