STGAP2GSCTR

STGAP2GSCTR

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STGAP2GSC

Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO 8 WIDE 300

The STGAP2GS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and...
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Key features
  • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
  • 100 V/ns Common Mode Transient Immunity (CMTI)
  • Overall input-output propagation delay: 45 ns
  • Separate sink and source option for easy gate driving configuration
  • UVLO function optimized for GaN
  • Gate driving voltage up to 15 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • Wide body SO-8W package
  • Galvanic isolation IEC 60747-17 certified, UL 1577 recognized
    • Maximum Repetitive Isolation Voltage
      VIORM = 1.2 kVPEAK
    • Transient Overvoltage VIOTM = 5.0
      kVPEAK
    • Isolation voltage VISO = 3.5
      kVRMS
Out of Stock
Quantity $ per unit Savings
1-500$3.460%
Contact sales
$3.46
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO 8 WIDE 300

The STGAP2GS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and...
Read More

Key features
  • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
  • 100 V/ns Common Mode Transient Immunity (CMTI)
  • Overall input-output propagation delay: 45 ns
  • Separate sink and source option for easy gate driving configuration
  • UVLO function optimized for GaN
  • Gate driving voltage up to 15 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • Wide body SO-8W package
  • Galvanic isolation IEC 60747-17 certified, UL 1577 recognized
    • Maximum Repetitive Isolation Voltage
      VIORM = 1.2 kVPEAK
    • Transient Overvoltage VIOTM = 5.0
      kVPEAK
    • Isolation voltage VISO = 3.5
      kVRMS