STGAP2GSC

STGAP2GSC

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STGAP2GSCTR

Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO 8 WIDE 300

The STGAP2GS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and...
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Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
  • dV/dt transient immunity ±100 V/ns
  • Input-output propagation delay: 45 ns
  • Separate sink and source option for easy gate driving configuration
  • UVLO function optimized for GaN
  • Gate driving voltage up to 15 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • Wide body SO-8W package
In stock
Quantity $ per unit Savings
1-9$2.980%
10-24$2.6810%
25-99$2.5315%
100-249$2.2026%
250-499$2.0830%
500$1.8737%
Contact sales
$2.98
$2.98
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Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO 8 WIDE 300

The STGAP2GS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and...
Read More

Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
  • dV/dt transient immunity ±100 V/ns
  • Input-output propagation delay: 45 ns
  • Separate sink and source option for easy gate driving configuration
  • UVLO function optimized for GaN
  • Gate driving voltage up to 15 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • Wide body SO-8W package