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Galvanically isolated 4 A single gate driver for SiC MOSFETs
The STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power... Read More
The STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.
The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection in order to avoid cross-conduction in case of controller malfunction. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption.
