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    STGAP2SICSNCTR

    STGAP2SICSNCTR

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    STGAP2SICSNTR

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    Galvanically isolated 4 A single gate driver for SiC MOSFETs
    Learn More about STGAP2SICSNTR

    Quantity $ per Unit Savings
    1 - 9$3.040%
    10 - 24$2.7310%
    25 - 99$2.5915%
    100 - 249$2.2426%
    250 - 499$2.1330%
    500$1.9137%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameSO-8
    Key features
    • High voltage rail up to 1700 V
    • Driver current capability: 4 A sink/source @25 °C
    • dV/dt transient immunity ±100 V/ns in full temperature range
    • Overall input-output propagation delay: 75 ns
    • Separate sink and source option for easy gate driving configuration
    • 4 A Miller CLAMP dedicated pin option
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Standby function
    • 4.8 kVPK isolation
    • Narrow body SO-8
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