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STPSC12065G-TR

STPSC12065G-TR

STPSC12065G2-TR

STPSC12065G2-TR

STPSC12065D

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650 V power Schottky silicon carbide diode

Quantity $ per Unit Savings
1 - 9$4.140%
10 - 20$3.7210%
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In stock
$4.15
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant
  • Power efficient product