STPSC12065D

650 V power Schottky silicon carbide diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220AC

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating T_j from -40 °C to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product

In stock

Quantity	$ per unit	Savings
1-9	$3.60	3%
10-20	$2.24	36%
20 +	Contact sales

$3.60

$3.49

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220AC

Description

Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating T_j from -40 °C to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product