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STPSC12065D

STPSC12065D

STPSC12065G-TR

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650 V power Schottky silicon carbide diode

Quantity $ per Unit Savings
1 - 9$4.260%
10 - 99$3.8410%
100 - 499$3.1526%
500$2.6837%
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In stock
$4.26
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameD2PAK

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant
  • Power efficient product