STPSC12065G-TR

650 V power Schottky silicon carbide diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating T_j from -40 °C to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product

In stock

Quantity	$ per unit	Savings
1-9	$3.50	0%
10-60	$2.94	16%
60 +	Contact sales

$3.50

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating T_j from -40 °C to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product