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STPSC12065GY-TR

STPSC12065GY-TR

STPSC12065G2Y-TR

STPSC12065G2Y-TR

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STPSC12065DY

Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameTO-220AC

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • VRRM guaranteed from -40 to +175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant
In stock
Quantity $ per unit Savings
1-9$3.360%
10-20$2.6322%
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$3.36
$3.36
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameTO-220AC

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • VRRM guaranteed from -40 to +175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant