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STPSC12065DY

STPSC12065DY

STPSC12065G2Y-TR

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Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$4.440%
10 - 99$4.0010%
100 - 499$3.2726%
500$2.7937%
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In stock
$4.44
or
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • VRRM guaranteed from -40 to +175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant