STPSC12065DY

STPSC12065DY

Active

STPSC12065G2Y-TR

Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • VRRM guaranteed from -40 to +175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant
In stock
Quantity $ per unit Savings
1-9$4.190%
10-99$3.5216%
100-249$2.8432%
250-499$2.8033%
500$2.5340%
Contact sales
$4.19
$4.18
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • VRRM guaranteed from -40 to +175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant