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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
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Low clamping, low capacitance bidirectional single line ESD protection
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N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
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Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package