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Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package
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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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N-channel 900 V, 0.088 Ohm typ., 40 A MDmesh K5 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package
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N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package
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Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package