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N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
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Trench gate field-stop 1200 V, 40 A high-speed H series IGBT in D7 packing
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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Ultra-low-power with FPU Arm Cortex-M4 MCU 80 MHz with 1 Mbyte of Flash memory, USB OTG, LCD, DFSDM
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Mainstream Mixed signals MCUs Arm Cortex-M4 core with DSP and FPU, 64 Kbytes of Flash memory, 72 MHz