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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 pa
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N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package
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Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long le
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N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
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N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-247 package
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N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a TO-220FP package