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Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
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N-channel 600 V, 196 mOhm typ., 15 A MDmesh M6 Power MOSFET in a TO-220FP package
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N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a D2PAK package
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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package
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Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET in a DPAK package