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Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
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38 V, 1.5 A synchronous step-down converter with 20 µA quiescent current
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Low-voltage, ultralow-power, 0.5°C accuracy I²C/SMBus 3.0 temperature sensor
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Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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Single-line bidirectional ESD protection for high speed interface
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Low clamping, low capacitance unidirectional single line ESD protection
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38 V, 2 A synchronous step-down converter with 20 µA quiescent current