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Very high accuracy (20 µV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp
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Automotive-grade, very high accuracy (70 uV), high bandwidth (3 MHz), high temperature (175 °C)
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Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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Low clamping, low capacitance bidirectional single line ESD protection
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Rail-to-rail input/output 5V CMOS Op-Amps, micro-power (60uA), GBP=880kHz, dual
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600 V half-bridge enhancement mode GaN HEMT with high voltage driver