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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 package
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High-performance and DSP with FPU, Arm Cortex-M7 MCU with 512 Kbytes of Flash memory, 216 MHz CPU, A
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Teseo V family industrial triple-band multi-constellation GNSS precise engine receiver
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Galvanic Isolated Octal High Side Smart Power Solid State Relay with SPI interface
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Low clamping and low capacitance bidirectional single line ESD protection